Electric component for high frequency power amplifier
US7271658B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Sep 18, 2007 |
| Priority date | — |
| Expiry date | Oct 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/447
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.