Patent · US Expired

Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon

US7273657B2 · kind B2 · utility

15Cited by
5References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 28, 2004
Grant dateSep 25, 2007
Priority date—
Expiry dateJul 12, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/173
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE—(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.