Method to control device threshold of SOI MOSFET's
US7273785B2 · kind B2 · utility
23Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Sep 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided in which an implanted back-gate is formed into a Si-containing layer of an SOI wafer. The implanted back-gate thus formed is capable of controlling the threshold voltage of a polysilicon-containing front-gate which is formed over a portion of the implanted back-gate region. The implanted back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.