Method and apparatus for processing semiconductor substrates
US7273819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Nov 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.