Method for programming phase-change memory array to set state and circuit of a phase-change memory device
US7274586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Mar 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a phase-change memory array and circuit of a phase-change memory device, each having a plurality of phase-change memory cells, may enable all the phase-change memory cells therein to be changed or set at a set resistance state, and may reduce the time needed to change the phase-change memory array to the set resistance state. In the method, a set current pulse having first through nth stages may be applied to the cells of the array to change the cells to the set resistance state. A minimum current level of the set current pulse applied to the phase-change memory cells in any stage may be higher than a reference current level for the cells of the array. A given current level of the set current pulse may be sequentially reduced from stage to stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.