Nonvolatile memory device for storing data and method for erasing or programming the same
US7274595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2005 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Feb 11, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for erasing or programming a nonvolatile memory device comprising a memory cell, a sense amplifier, and a page memory, the method comprising the steps of: performing an erasure or programming operation in a manner dependent on the data stored in the page memory, reading out the content of the erased or programmed memory cells, modifying the content of the page memory in a manner dependent on the data read out, and performing a further erasure or programming operation in a manner dependent on the modified data, and the data read out from the erased or programmed memory cell being fed to the page memory, and the content of the page memory being modified in a manner solely dependent on these data and control signals controlling the temporal sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.