Selective heating using flash anneal
US7276457B2 · kind B2 · utility
16Cited by
6References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2005 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Jul 25, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 μm, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.