Beam space-charge compensation device and ion implantation system having the same
US7276711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2005 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.