Image sensor with microcrystalline germanium photodiode layer
US7276749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charges collected by the charge collecting electrode. A photodiode layer of charge generating material located above the pixel circuits convert electromagnetic radiation into electrical charges. This photodiode layer includes microcrystalline germanium and defines at least an n-layer, and i-layer and a p-layer. The sensor array also includes and a surface electrode in the form of a grid or thin transparent layer located above the layer of charge generating material. The sensor is especially useful for imaging in visible and near infrared spectral regions of the electromagnetic spectrum and provides imaging with starlight illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.