e-Phocus
13Patents
5Active
13Granted
40Portfolio score
Filing activity: Feb 5, 2002 → Mar 25, 2009 · 5 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7276749B2 | Image sensor with microcrystalline germanium photodiode layer | Emerging Cross-Sectional Technologies | 178 | Expired |
| US6809358B2 | Photoconductor on active pixel image sensor | Electricity | 129 | Expired |
| US7525168B2 | CMOS sensor with electrodes across photodetectors at approximately equal potential | Electricity | 71 | Active |
| US6730900B2 | Camera with MOS or CMOS sensor array | Emerging Cross-Sectional Technologies | 49 | Expired |
| US7906826B2 | Many million pixel image sensor | Electricity | 42 | Active |
| US6730914B2 | Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes | Electricity | 40 | Expired |
| US7436038B2 | Visible/near infrared image sensor array | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6791130B2 | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure | Electricity | 34 | Expired |
| US7786543B2 | CDS capable sensor with photon sensing layer on active pixel circuit | Electricity | 31 | Active |
| US6798033B2 | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure | Electricity | 31 | Expired |
| US7196391B2 | MOS or CMOS sensor with micro-lens array | Electricity | 24 | Active |
| US7411233B2 | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7820525B2 | Method for manufacturing hybrid image sensors | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.