Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
US7276751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2005 |
| Grant date | Oct 2, 2007 |
| Priority date | — |
| Expiry date | Sep 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The present invention relates to a semiconductor device that contains at least one trench metal-oxide-metal (MIM) capacitor and at least one other logic circuitry component, preferably at least one field effect transistor (FET). The trench MIM capacitor is located in a trench in a substrate and comprises inner and outer metallic electrode layers with a dielectric layer therebetween. The FET comprises a source region, a drain region, a channel region, and at least one metal contact connected with the source or drain region. The present invention also relates to a fabrication process, which integrates the processing steps for fabricating the trench MIM capacitor with the conventional middle-of-line processing steps for fabricating metal contacts, so that the inner metallic electrode layer of the trench MIM capacitor and the metal contact of the FET or other logic circuitry components are formed by a single middle-of-line processing step and comprise essentially the same metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.