Methods and apparatus for forming precursors
US7279201B2 · kind B2 · utility
1Cited by
27References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2002 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Apr 4, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4488
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to react with the ions to form the precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.