Photoresist polymer and photoresist composition containing the same
US7279256B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 9, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Nov 18, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer comprising a polymerization repeating unit represented by Formula I is less sensitive to change in the amount of energy due to its higher active energy than that of a conventional photoresist polymer. As a result, a phenomenon where the portion of the pattern for the storage electrode contact region that receives relatively large amount of light becomes too thin is avoided when the device isolation film pattern is formed, and wherein pattern collapse caused by a high aspect ratio due to high etching resistance is prevented or avoided.whereinR1–R10, a, b, c and d are as defined in the description.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.