Schottky diode and method of manufacture
US7279390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Mar 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.