Forming a copper diffusion barrier
US7279423B2 · kind B2 · utility
11Cited by
21References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.