Peter K. Moon
31Patents
11h-index
38Co-inventors
75Inventor score
Filing activity: Sep 29, 1995 → Sep 1, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5719085A | Shallow trench isolation technique | Emerging Cross-Sectional Technologies | 397 | Expired |
| US5827769A | Method for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrode | Electricity | 99 | Expired |
| US7018918B2 | Method of forming a selectively converted inter-layer dielectric using a porogen material | Electricity | 60 | Expired |
| US6977435B2 | Thick metal layer integrated process flow to improve power delivery and mechanical buffering | Electricity | 55 | Expired |
| US5985735A | Trench isolation process using nitrogen preconditioning to reduce crystal defects | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6943121B2 | Selectively converted inter-layer dielectric | Electricity | 31 | Expired |
| US6649515B2 | Photoimageable material patterning techniques useful in fabricating conductive lines in circuit structures | Electricity | 23 | Expired |
| US6908829B2 | Method of forming an air gap intermetal layer dielectric (ILD) by utilizing a dielectric material to bridge underlying metal lines | Electricity | 22 | Expired |
| US6118168A | Trench isolation process using nitrogen preconditioning to reduce crystal defects | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6703069B1 | Under bump metallurgy for lead-tin bump over copper pad | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7586196B2 | Apparatus for an improved air gap interconnect structure | Electricity | 11 | Active |
| US7279423B2 | Forming a copper diffusion barrier | Electricity | 11 | Expired |
| US6878465B2 | Under bump metallurgy for Lead-Tin bump over copper pad | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6833320B2 | Removing sacrificial material by thermal decomposition | Electricity | 9 | Expired |
| US5911111A | Polysilicon polish for patterning improvement | Electricity | 8 | Expired |
| US7304388B2 | Method and apparatus for an improved air gap interconnect structure | Electricity | 6 | Expired |
| US6707120B1 | Field effect transistor | Electricity | 5 | Expired |
| US7402519B2 | Interconnects having sealing structures to enable selective metal capping layers | Electricity | 4 | Active |
| US8058710B2 | Interconnects having sealing structures to enable selective metal capping layers | Electricity | 4 | Active |
| US7060617B2 | Method of protecting a seed layer for electroplating | Electricity | 2 | Expired |
| US7078754B2 | Methods and apparatuses for producing a polymer memory device | Electricity | 2 | Expired |
| US7223694B2 | Method for improving selectivity of electroless metal deposition | Electricity | 2 | Expired |
| US6900063B2 | Methods and apparatuses for producing a polymer memory device | Electricity | 1 | Expired |
| US9437545B2 | Interconnects having sealing structures to enable selective metal capping layers | Electricity | 1 | Active |
| US7239019B2 | Selectively converted inter-layer dielectric | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.