Like integrated circuit devices with different depth
US7279426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Nov 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.