Material and method for forming low-dielectric-constant film
US7279434B2 · kind B2 · utility
2Cited by
1References
3Claims
0Family size
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Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The material contemplated by this invention for the formation of a low-dielectric-constant film contains in all the stereoisomer molecules of 1,3,5,7-tetramethyl cyclotetrasiloxane (TMCTS) not less than 15% and not more than 100% of a stereoisomer having all the four hydrogen atoms forming an Si—H bond fall on the same size relative to the Si—O ring plane. It is utilized as a material for forming a low-dielectric-constant film which can be used for enhancing the function of an integrated circuit in the field of semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.