Patent · US Expired

Semiconductor substrate and process for producing it

US7279700B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Dirk Dantz · Königslutter am Elm, DE
Andreas Huber · Holzgerlingen, DE
Reinhold Wahlich · Burghausen, DE
Brian Murphy · Pfarrkirchen, DE

Key dates

Filing date	Nov 3, 2005
Grant date	Oct 9, 2007
Priority date	—
Expiry date	Nov 3, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02658
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.