Semiconductor device and a manufacturing method thereof
US7279790B2 · kind B2 · utility
1Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2002 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Mar 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer interconnection structure that offers a fast semiconductor operation is realized by employing copper wiring, electro migration of which is prevented from occurring by providing a via plug that includes a layer of a high melting-point metal, such as tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.