Dual gate oxide one time programmable (OTP) antifuse cell
US7280425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Oct 9, 2007 |
| Priority date | — |
| Expiry date | Dec 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/027
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.