Scatterometry alignment for imprint lithography
US7281921B2 · kind B2 · utility
32Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2006 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/00
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.