Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
US7282094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2003 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Dec 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a single crystal 14 growing from a melt 12 from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt 12. The computer-based simulation, at steps 8 to 15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.