Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer
US7282381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Sep 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically, the invention relates to a method of producing a self-supporting substrate comprising a III-nitride, in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used, for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than 2″.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.