Gilles Nataf
5Patents
5h-index
10Co-inventors
56Inventor score
Filing activity: Jul 7, 2000 → Jan 24, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6325850A | Method for producing a gallium nitride epitaxial layer | Electricity | 140 | Expired |
| US6802902B2 | Process for producing an epitaxial layer of gallium nitride | Electricity | 46 | Expired |
| US7282381B2 | Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer | Electricity | 33 | Expired |
| US7488385B2 | Method for epitaxial growth of a gallium nitride film separated from its substrate | Emerging Cross-Sectional Technologies | 11 | Expired |
| US9728673B2 | Method for the production of monolithic white diodes | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.