Combined binary oxide semiconductor device
US7282782B2 · kind B2 · utility
3,974Cited by
7References
38Claims
0Family size
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Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
A semiconductor device can include a channel including a first binary oxide and a second binary oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.