3-D transformer for high-frequency applications
US7283029B2 · kind B2 · utility
9Cited by
23References
18Claims
0Family size
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Key dates
| Filing date | Dec 5, 2005 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Dec 5, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4902
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors>60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6<k<0.9 may be created with very high self-resonance frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.