Characterizing resist line shrinkage due to CD-SEM inspection
US7285781B2 · kind B2 · utility
9Cited by
7References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2004 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Apr 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/225
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A CD-SEM (critical dimension-scanning electron microscope) system may utilize a technique for characterizing and reducing shrinkage carryover due to CD-SEM measurements. The system may identify the affects of CD-SEM measurements on the resist and adjust the operating parameters for a particular resist to avoid or significantly reduce shrinkage carryover. In this manner, the system may obtain more reliable CD measurements and avoid damage to the measured feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.