Semiconductor laser devices and methods
US7286583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2005 |
| Grant date | Oct 23, 2007 |
| Priority date | — |
| Expiry date | Jul 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.