Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer
US7288008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Oct 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31788
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.