Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
US7288152B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Jul 31, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm(×1.013×105 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I):P≦P1<(P+45), (I)where in the expression (I), P (atm(×1.013×105 Pa)) denotes the minimum pressure that is required for generating GaN crystals at a temperature T° C. of the mixed melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.