Hermetic low dielectric constant layer for barrier applications
US7288205B2 · kind B2 · utility
8Cited by
159References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Jan 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprising a reducing agent, an oxygen containing compound, and an organosilicon compound, into the processing chamber, generating a plasma from a dual frequency RF power source, and depositing a dielectric material comprising silicon, carbon, and oxygen. The dielectric material may be used as an etch stop, an anti-reflective coating, or a passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.