Method and apparatus for mobility enhancement in a semiconductor device
US7288448B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Jun 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region (18) is formed over a substrate that is bi-axially stressed. Source (30) and drain (32) regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axial stress are both compressive for P-channel transistors and both tensile for N-channel transistors. The result is that carrier mobility is enhanced for both short channel and long channel transistors. Both transistor types can be included on the same integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.