Electron source, and charged-particle apparatus comprising such an electron source
US7288773B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Sep 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). The semiconductor material may, for example, comprise a semiconductor nanowire including InAs and GaInAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.