Low-noise semiconductor photodetectors
US7288825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.