Fabricating a self-aligned bipolar transistor having increased manufacturability

US7291536B1 · kind B1 · utility

Assignee

• Newport Fab, LLC · US

Inventors

• Amol Kalburge · Irvine, US
• Kevin Q. Yin · Lo Wu, CN
• Kenneth M. Ring · Waterville, US

Key dates

• Filing date: Jul 6, 2005
• Grant date: Nov 6, 2007
• Expiry date: Dec 31, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/021

Abstract

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a base oxide layer situated on top surface of the base. The bipolar transistor further comprises a sacrificial post situated on base oxide layer. The bipolar transistor further comprises a conformal layer situated over the sacrificial post and top surface of the base, where the conformal layer has a density greater than a density of base oxide layer. The conformal layer may be, for example, HDPCVD oxide. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer. The sacrificial planarizing layer has a first thickness in a first region between first and second link spacers and a second thickness in a second region outside of first and second link spacers, where the second thickness is generally greater than the first thickness.