Copper interconnect wiring and method of forming thereof
US7291558B2 · kind B2 · utility
9Cited by
14References
60Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2005 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Nov 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.