Patent · US Expired

Process for manufacturing an SOI wafer by annealing and oxidation of buried channels

US7294536B2 · kind B2 · utility

29Cited by

31References

27Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Flavio Francesco Villa · Milano, IT
Gabriele Barlocchi · Cornaredo, IT
Pietro Corona · Roma, IT

Key dates

Filing date	Dec 20, 2002
Grant date	Nov 13, 2007
Priority date	—
Expiry date	Mar 10, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/967
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.