Tunable selectivity slurries in CMP applications
US7294576B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Jun 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.