Nanotube-on-gate FET structures and applications
US7294877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Jul 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the sourc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.