Flash memory programming using an indication bit to interpret state
US7295475B2 · kind B2 · utility
9Cited by
16References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Jan 3, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile memory, such as Flash memory, is programmed by writing a window of information to memory. The programmed/non-programmed state of each memory cell may be dynamically determined for each window and stored as an indication bit. These techniques can provide for improved average power drain and a reduced maximum current per window during programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.