Method for producing a field effect transistor
US7297578B2 · kind B2 · utility
0Cited by
8References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | May 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6735
Abstract
A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath the portion of semiconductor material. A layer of an electrically insulating material is located between the portion of temporary material and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.