Patent · US Active

Method of segmenting a wafer

US7297610B2 · kind B2 · utility

3Cited by
2References
17Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 18, 2005
Grant dateNov 20, 2007
Priority date
Expiry dateJul 7, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/78
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the medium layer is then bonded to a carrier wafer. Thereafter, a second mask pattern is utilized to remove the substrate layer uncovered by the second mask pattern. Finally, the medium layer is separated from the carrier wafer, the substrate layer is bonded to an extendable film, and the medium layer is then removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.