Method of forming an oxide layer including increasing the temperature during oxidation
US7297620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.