Method and apparatus for semiconductor device and semiconductor memory device
US7297634B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 4, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a charge collecting region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the charge collecting region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.