Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure

US7298013B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Guenter Schmid · Hemhofen, DE
• Marcus Halik · Erlangen, DE
• Hagen Klauk · Erlangen, DE
• Ute Zschieschang · Stuttgart, DE
• Franz Effenberger · Stuttgart, DE
• Markus Schutz · Stuttgart, DE
• Steffen Maisch · Gerlingen, DE
• Steffen Seifritz · Gladbeck, DE
• Frank Buckel · Krefeld, DE

Key dates

• Filing date: Dec 20, 2005
• Grant date: Nov 20, 2007
• Expiry date: May 11, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/936
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.