Semiconductor device and method of manufacturing the same
US7298020B2 · kind B2 · utility
3Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2004 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Mar 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
Abstract
A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.