Flash storage system with write/erase abort detection mechanism
US7299314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2003 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Sep 1, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention presents a non-volatile memory and method for its operation that ensures reliable mechanism for write and erase abort detection in the event of lost of power during non-volatile memory programming and erasing with minimized system performance penalty. During a multi-sector write process, an indication of a successful write in one sector is written into the overhead of the following sector at the same time as the following sector's data content is written. The last sector written will additionally have an indication of its own successful write written into its overhead. For erase, an erase abort flag in the first sector of the block can be marked after a successful erase operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.