Selective barrier metal polishing solution
US7300602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2003 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jan 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.