Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7300603B2 · kind B2 · utility
4Cited by
4References
5Claims
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Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Apr 17, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the polymer comprising at least two carboxylic acid functionalities, a pH of less than or equal to 4 and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.